AP2N10 NMOS SOT23 场效应管 N道沟MOS

Super Low Gate ChargeExcellent Cdv/dt effect decline

Advanced high cell density Trenchtechnology​

TheAP2N10 is the high cell density trenchedN-ch MOSFETs, which provides excellent RDSONand efficiency for most of the small powerswitching and load switch applications.Themeet the RoHS and Green Productrequirement with full function reliability approved.​