EM681FV16B
• Process Technology : 0.15μm Full CMOS
• Organization : 512K x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 48-FPBGA, 44-TSOP2
专注SDRAM可替代Lyontek、Samsung、ISSI、Cypress YNIX Etron Winbond SDRAM/DDR等产品
8Mbit EM681FV16B 512Kx16 SingleC/S 3.3V 45,55,70ns 48BGA
EM680FV16B 512Kx16 DualC/S 3.3V 45,55,70ns 48BGA
EM681FV16BU 512Kx16 SingleC/S 3.3V 45,55,70ns 44TSOP2
EM681FV8B 1Mx8 Single C/S 3.3V 45,55,70ns 48BGA
EM680FV8B 1Mx8 Dual C/S 3.3V 45,55,70ns 48BGA
EM681FV8BU 1Mx8 Dual C/S 3.3V 45,55,70ns 44TSOP2
EM680FV8BU 1Mx8 Dual C/S 3.3V 45,55,70ns 44TSOP2
• Process Technology : 0.15μm Full CMOS
• Organization : 512K x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 48-FPBGA, 44-TSOP2
专注SDRAM可替代Lyontek、Samsung、ISSI、Cypress YNIX Etron Winbond SDRAM/DDR等产品
8Mbit EM681FV16B 512Kx16 SingleC/S 3.3V 45,55,70ns 48BGA
EM680FV16B 512Kx16 DualC/S 3.3V 45,55,70ns 48BGA
EM681FV16BU 512Kx16 SingleC/S 3.3V 45,55,70ns 44TSOP2
EM681FV8B 1Mx8 Single C/S 3.3V 45,55,70ns 48BGA
EM680FV8B 1Mx8 Dual C/S 3.3V 45,55,70ns 48BGA
EM681FV8BU 1Mx8 Dual C/S 3.3V 45,55,70ns 44TSOP2
EM680FV8BU 1Mx8 Dual C/S 3.3V 45,55,70ns 44TSOP2


