点击图片查看大图Samsung said it produced 8Gb DDR4 chips using a second generation of 10 nanometer technology to make a new breakthrough. Samsung said that the production capacity of the second generation process would be 30 per cent higher than the first 10 nanometer technology, helping the company meet the soaring demand for DRAM chips from global customers.
In addition, the second generation of 10 nanometer chips is 10 percent faster than the first generation and 15 percent less power.
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Part number
Micron
MT29F1G08ABAEAH4:E
MT29F2G08ABAEAH4-IT:E
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MT48H32M16LFB4-6 AT:C
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M25PE40-VMN6TP
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M25P16-VMN6TP
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N25Q128A13ESE40F
N25Q032A13ESC40F
N25Q032A13ESE40F
MT29F1G08ABAEAWP-IT:E
MT29F1G08ABAEAWP:E
MT29F1G08ABADAWP:D
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MT25QL128ABA8ESF-0SIT
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PC28F640J3F75A
MT41K256M8DA-125 IT:K
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MT48LC16M16A2P-7E:G
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MTFC2GMDEA-0M WT
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Samsung
KLMBG4WEBD-B031002
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Cystron Technology Limited
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