采用SOT78塑料封装的平面钝化敏感门极四象限三端双向可控硅用于通用双向
开关和相位控制应用。这种超敏感门极“D系列”三端双向可控硅用于直接连接微
控制器、逻辑集成电路和其他低功耗门极触发电路。
特性和优势
直接连接逻辑电平IC
直接连接低功耗门极驱动器和微控制器
更强的电流浪涌耐受能力
高阻断电压能力
凭借平面钝化结构实现电压稳固性和可靠性
所有四个象限中的触发
超敏感门极
应用
空调室内风扇控制
电池供电的应用
通用开关和相位控制
SymbolParameterConditionsMinTyp/NomMaxUnitStatic characteristicsDynamic characteristics
VDRM | repetitive peak off-state voltage | 600 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Tlead ≤ 51 °C | 1 | A | ||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 16 | A | ||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 17.5 | A | ||
Tj | junction temperature | 125 | °C | |||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 2 | 5 | mA | |
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 2.5 | 5 | mA | |
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 2.5 | 5 | mA | |
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C | 5 | 10 | mA | |
IH | holding current | VD = 12 V; Tj = 25 °C | 1.2 | 10 | mA | |
VT | on-state voltage | IT = 5 A; Tj = 25 °C | 1.4 | 1.7 | V | |
dVD/dt | rate of rise of off-state voltage | VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; RGT1(ext) = 1 kΩ | 5 |